| PART |
Description |
Maker |
| ATF-13336 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
| TLT-13-6015 TLT-13-6014 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-8-2015 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated
|
| TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TLA-18-2002 |
Low Noise Amplifier 2 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
|
